elektronische bauelemente 2SA812K -50 v, -100 ma pnp epitaxial planar transistor 01-june-2002 rev. a page 1 of 2 rohs compliant product a suffix of ?-c? specifies halogen and lead free features z complementary to 2sc1623k z high dc current gain: h fe = 200 typ. (v ce = -6v, i c = -1ma) z high voltage: v ceo = -50v package dimensions absolute maximum ratings at ta = 25 c parameter symbol ratings unit collector to base voltage v cbo -60 v collector to emitter voltage v ceo -50 v emitter to base voltage v ebo -5 v collector currrent i c -100 ma total power dissipation pc 200 mw junction, storage temperature t j , t stg +150, -55 ~ +150 characteristics at ta = 25 c symbol min. typ. max. unit test conditions bvcbo -60 - - v i c =-100ua bvceo -50 - - v i c =-1ma bvebo -5 - - v i e =-100ua i cbo - - -100 na v cb =-60v i ebo - - -100 na v eb =-5v *v ce(sat) - - 300 mv i c =100ma, i b =10ma v be -0.58 - -0.68 v i c = -1ma, v ce = -6v h fe 90 - 600 v ce =-6v, i c =-1ma f t - 180 - mhz v ce =-6v, i c =-10ma c ob - 4.5 - pf v cb = -10v, f = 1 mhz classification of h fe rank p y g b range 90 - 180 135 - 270 200 - 400 300 - 600 marking m4 m5 m6 m7 collector base emitter dim min max a 2.800 3.040 b 1.200 1.400 c 0.890 1.110 d 0.370 0.500 g 1.780 2.040 h 0.013 0.100 j 0.085 0.177 k 0.450 0.600 l 0.890 1.020 s 2.100 2.500 v 0.450 0.600 all dimension in mm sot-23 k j c h l a b s g v 3 1 2 d top view 1 2 3
elektronische bauelemente 2SA812K -50 v, -100 ma pnp epitaxial planar transistor 01-june-2002 rev. a page 2 of 2 characteristic curves
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